Applications

Etchants vary according to the variety of electrode material being used: ITO, Al and Cu can all be utilized for the process. Specifically, the etching process in this situation is used for Cu/Mo wires. Cu has qualities of high conductivity and is currently replacing Al components in TFT array manufacturing processes; however, to overcome copper to-glass-substrate adhesion problems encountered during heating and other manufacturing processes, Molybdenum (Mo) is one option used as a transitioning layer on glass substrates for subsequent layering of copper and TFT arrays to be embedded as a part of LCD manufacture.

To remove unwanted areas of materials to create electrode pattern formations by an etching process, Daxin has developed Cu/ Mo Etchant with the aim of providing stable etching uniformity, even under ultra high copper loading. Additionally, it possesses a controllable etching rate for Cu/Mo wires in order to achieve smooth and even Cu wire structures.

Features

1. Hydrogen Peroxide Type is Environmental Friendly
2. Higher Level Stability for Ultra High Copper Loading (>10kppm)
3. Excellent Etching Uniformity
4. Higher Precision and Controlled Taper Profile after Etching

Specifications